Physic Labs

Condensed matter physics

Band theory and semiconductors

In crystals, electron states form energy bands; the band gap and Fermi level shape electrical conduction.

In crystals, electron states form energy bands; the band gap and Fermi level shape electrical conduction.

E±(k)=±ℏvF∣k−K∣,Eg=Ec−EvE_\pm(\mathbf{k})=\pm\hbar v_F|\mathbf{k}-\mathbf{K}|,\qquad E_g=E_c-E_v

Definition: Bands and the band gap

A periodic potential creates allowed bands separated by gaps. The Fermi level is the equilibrium electron chemical potential, not necessarily an occupied state.

Explore the linear Dirac cone and vary the gap; the Fermi-level view sketches occupation near the Dirac point.

Physical model

A periodic potential creates allowed bands separated by gaps. The Fermi level is the equilibrium electron chemical potential, not necessarily an occupied state.

E±(k)=±ℏvF∣k−K∣,Eg=Ec−EvE_±(k)=±ℏv_F|k−K|,\qquad E_g=E_c−E_v

Semiconductors have a moderate gap; doping changes carrier density. Near graphene’s K point, two bands meet in a linear Dirac cone, gapless in the ideal model.

Example: Worked example

For E_g=1.1 eV, the threshold photon wavelength is λ≈1240/1.1≈1127 nm (direct-transition model).

Solution

Convert energy to wavelength using hc≈1240 eV·nm: λ≈1240/1.1=1127 nm.

Quick check

Bloch’s theorem states that eigenstates in a periodic potential have the form ψₙₖ(r)=e^{ik·r}uₙₖ(r), where u has lattice periodicity. The first Brillouin zone contains independent wave vectors; Bragg reflection at its boundary can open an energy gap. The curvature of Eₙ(k) near an extremum determines effective mass, so carrier mobility need not reflect the free-electron mass. A Fermi level in a gap suggests an insulator, whereas a band crossing it usually indicates metallic behavior.

The effective-mass approximation is useful near a band extremum, where E(k) can be expanded to quadratic order. At a band maximum the electron curvature corresponds to negative effective mass; describing the missing electron as a positively charged hole with positive mass is often more convenient. Doping shifts the chemical potential and changes carrier density. For optical transitions, crystal-momentum conservation and selection rules determine whether absorption is strong.

In an intrinsic semiconductor, thermal excitation creates conduction electrons and valence-band holes in equal densities. Donor or acceptor doping shifts the Fermi level and makes one carrier type dominant. The gap and effective masses influence optical absorption and mobility.

What is the dispersion near a Dirac point in ideal graphene?

What does semiconductor doping usually change directly?

References

  1. Charles Kittel (2004). Introduction to Solid State Physics